We investigate the barrier imperfection and interfacial scattering effects on resistance-area product
(RA) and tunneling magnetoresistance (TMR) of magnesium oxide (MgO) based magnetic
tunneling junction (MTJ). We assume that barrier imperfection reduces the band gap of MgO; thus,
it affects both TMR and RA values. The lattice mismatch between MgO and magnetic electrodes
leads to interface scattering which reduces TMR. As an application, the MTJ two-state resistance
variations due to the process variations are also discussed in the paper.
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Copyright (2014) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Appl. Phys. 115, 034507 (2014) and may be found at http://dx.doi.org/10.1063/1.4862310.