Nitrogen-doped titanium-tungsten (N-TiW) was proposed as a tunable heater in Phase Change
Random Access Memory (PCRAM). By tuning N-TiW’s material properties through doping, the
heater can be tailored to optimize the access speed and programming current of PCRAM.
Experiments reveal that N-TiW’s resistivity increases and thermal conductivity decreases with
increasing nitrogen-doping ratio, and N-TiW devices displayed ( 33% to 55%) reduced programming
currents. However, there is a tradeoff between the current and speed for heater-based
PCRAM. Analysis of devices with different N-TiW heaters shows that N-TiW doping levels could
be optimized to enable low RESET currents and fast access speeds.
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Copyright (2014) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 105, 153501 (2014) and may be found at http://dx.doi.org/10.1063/1.4898002.