Nitrogen-doped titanium-tungsten (N-TiW) was proposed as a tunable heater in Phase Change
Random Access Memory (PCRAM). By tuning N-TiW’s material properties through doping, the
heater can be tailored to optimize the access speed and programming current of PCRAM.
Experiments reveal that N-TiW’s resistivity increases and thermal conductivity decreases with
increasing nitrogen-doping ratio, and N-TiW devices displayed ( 33% to 55%) reduced programming
currents. However, there is a tradeoff between the current and speed for heater-based
PCRAM. Analysis of devices with different N-TiW heaters shows that N-TiW doping levels could
be optimized to enable low RESET currents and fast access speeds.