Implementation of nitrogen-doped titanium-tungsten tunable heater in phase change random access memory and its effects on device performance

Implementation of nitrogen-doped titanium-tungsten tunable heater in phase change random access memory and its effects on device performance
Title:
Implementation of nitrogen-doped titanium-tungsten tunable heater in phase change random access memory and its effects on device performance
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Applied Physics Letters
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Publication Date:
13 October 2014
Citation:
Applied Physics Letters 105, 153501 (2014)
Abstract:
Nitrogen-doped titanium-tungsten (N-TiW) was proposed as a tunable heater in Phase Change Random Access Memory (PCRAM). By tuning N-TiW’s material properties through doping, the heater can be tailored to optimize the access speed and programming current of PCRAM. Experiments reveal that N-TiW’s resistivity increases and thermal conductivity decreases with increasing nitrogen-doping ratio, and N-TiW devices displayed ( 33% to 55%) reduced programming currents. However, there is a tradeoff between the current and speed for heater-based PCRAM. Analysis of devices with different N-TiW heaters shows that N-TiW doping levels could be optimized to enable low RESET currents and fast access speeds.
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Description:
Copyright (2014) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 105, 153501 (2014) and may be found at http://dx.doi.org/10.1063/1.4898002.
ISSN:
0003-6951
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