Programming current density reduction for elevated-confined phase change memory with a self-aligned oxidation TiWOx heater

Programming current density reduction for elevated-confined phase change memory with a self-aligned oxidation TiWOx heater

Applied Physics Letters

10.1063/1.4902872

http://dx.doi.org/10.1063/1.4902872

Hongxin Yang, Hock Koon Lee, Rong Zhao, Luping Shi, Tow Chong Chong

26 November 2014

Applied Physics Letters 105, 213509 (2014)

The high programming current density of phase change memory (PCM) is an obstacle for its scaling and high density chip development. In this paper, an elevated-confined PCM (e-PCM) with self-aligned oxidation heater was proposed to reduce the programming current density by increasing the Joule heat and reducing heat loss simultaneously. 200 nm diameter size e-PCM with self-aligned TiWOx heater was fabricated and tested. The RESET current is 350 lA with 100 ns pulse and the corresponding programming current density is 1.12 MA/cm2. The low current density indicates this structure as a promising candidate for high density PCM chip applications.

PublisherCopyrights

Copyright (2014) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 105, 213509 (2014) and may be found at http://dx.doi.org/10.1063/1.4902872.

https://oar.a-star.edu.sg/communities-collections/articles/12301

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