The high programming current density of phase change memory (PCM) is an obstacle for its
scaling and high density chip development. In this paper, an elevated-confined PCM (e-PCM)
with self-aligned oxidation heater was proposed to reduce the programming current density by
increasing the Joule heat and reducing heat loss simultaneously. 200 nm diameter size e-PCM with
self-aligned TiWOx heater was fabricated and tested. The RESET current is 350 lA with 100 ns
pulse and the corresponding programming current density is 1.12 MA/cm2. The low current density
indicates this structure as a promising candidate for high density PCM chip applications.