Novel epitaxial silicon interlayer for junction engineering in aggressively-scaled germanium photodetectors

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Novel epitaxial silicon interlayer for junction engineering in aggressively-scaled germanium photodetectors
Title:
Novel epitaxial silicon interlayer for junction engineering in aggressively-scaled germanium photodetectors
Journal Title:
AIP Advances
Keywords:
Publication Date:
09 September 2013
Citation:
Abstract:
A new technique which uses an ultra-thin silicon interlayer in germanium photodetectors for junction engineering is demonstrated. A 5 nm epitaxially grown silicon layer was effective in preventing phosphorus diffusion into bulk Ge at 625 ◦C. Abrupt junction profile was achieved in thin 250 nm Ge PDs which led to improved bandwidth performance during low voltage operations (at 1V or less).
License type:
http://creativecommons.org/licenses/by/4.0/
Funding Info:
Description:
ISSN:
2158-3226
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