CMOS compatible monolithic multi-layer Si_3N_4-on-SOI platform for low-loss high performance silicon photonics dense integration

CMOS compatible monolithic multi-layer Si_3N_4-on-SOI platform for low-loss high performance silicon photonics dense integration

Optics Express

10.1364/OE.22.021859

http://www.opticsinfobase.org/abstract.cfm?URI=oe-22-18-21859

Ying Huang, Junfeng Song, Xianshu Luo, Tsung-Yang Liow, Guo-Qiang Lo

02 September 2014

Ying Huang, Junfeng Song, Xianshu Luo, Tsung-Yang Liow, and Guo-Qiang Lo, "CMOS compatible monolithic multi-layer Si3N4-on-SOI platform for low-loss high performance silicon photonics dense integration," Opt. Express 22, 21859-21865 (2014) http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-22-18-21859

We demonstrated a low-loss CMOS-compatible multi-layer platform using monolithic back-end-of-line (BEOL) integration. 0.8dB/cm propagation loss is measured for the PECVD Si3N4 waveguide at 1580nm wavelength. The loss is further reduced to 0.24dB/cm at 1270nm wavelength, justifying the platform’s feasibility for O-band operation. An inter-layer transition coupler is designed, achieving less than 0.2dB/transition loss across 70nm bandwidth. This is the lowest inter-layer transition loss ever reported. A thermally tuned micro-ring filter is also integrated on the platform, with performance comparable to similar device on SOI platform.

PublisherCopyrights

https://oar.a-star.edu.sg/communities-collections/articles/12173

1094-4087

Institute of Microelectronics