A Novel RRAM Stack With TaOx/HfOy Double-Switching-Layer Configuration Showing Low Operation Current Through Complimentary Switching of Back-to-Back Connected Subcells

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A Novel RRAM Stack With TaOx/HfOy Double-Switching-Layer Configuration Showing Low Operation Current Through Complimentary Switching of Back-to-Back Connected Subcells
Title:
A Novel RRAM Stack With TaOx/HfOy Double-Switching-Layer Configuration Showing Low Operation Current Through Complimentary Switching of Back-to-Back Connected Subcells
Other Titles:
IEEE Electron Device Letters
Keywords:
Publication Date:
07 April 2014
Citation:
Yan Zhe Tang; Zheng Fang; Xin Peng Wang; Bao Bin Weng; Zhi Xian Chen; Guo Qiang Lo, "A Novel RRAM Stack With {\rm TaO}_{x}/{\rm HfO}_{y} Double-Switching-Layer Configuration Showing Low Operation Current Through Complimentary Switching of Back-to-Back Connected Subcells," Electron Device Letters, IEEE , vol.35, no.6, pp.627,629, June 2014 doi: 10.1109/LED.2014.2314093
Abstract:
In this letter, a novel and fully CMOS compatible RRAM stack—(TiN-TaOx-Hf-HfOy-TiN) has been demonstrated. By serially connecting two back-to-back subcells, Hf-HfOy-TiN and Hf-TaOx-TiN, the cell exhibits outstanding performances, including low Imax (35 μA), stable ION (>10 μA), and IOFF (<1 μA), and over 2×104 dc cycles. By examining the switching characteristics, we have confirmed the well controlled conduction/filament size during the complementary set/reset processes contributes to the stable and low current operation.
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PublisherCopyrights
Funding Info:
Description:
ISSN:
0741-3106
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