Compositionally matched nitrogen-doped Ge2Sb2Te5/Ge2Sb2Te5 superlattice-like structures for phase change random access memory

Compositionally matched nitrogen-doped Ge2Sb2Te5/Ge2Sb2Te5 superlattice-like structures for phase change random access memory
Title:
Compositionally matched nitrogen-doped Ge2Sb2Te5/Ge2Sb2Te5 superlattice-like structures for phase change random access memory
Other Titles:
Applied Physics Letters
Publication Date:
27 September 2013
Citation:
Abstract:
A compositionally matched superlattice-like (SLL) structure comprised of Ge2Sb2Te5 (GST) and nitrogen-doped GST (N-GST) was developed to achieve both low current and high endurance Phase Change Random Access Memory (PCRAM). N-GST/GST SLL PCRAM devices demonstrated 37% current reduction compared to single layered GST PCRAM and significantly higher write/erase endurances of 10^8 compared to 10^6 for GeTe/Sb2Te3 SLL devices. The improvements in endurance are attributed to the compositionally matched N-GST/GST material combination that lowers the diffusion gradient between the layers and the lower crystallization-induced stress in the SLL as revealed by micro-cantilever stress measurements.
License type:
PublisherCopyrights
Funding Info:
Description:
ISSN:
0003-6951
Files uploaded: